HGT1S10N120BNST - IGBT 1200V 35A 298W TO263AB
Nombor Bahagian pengilang
Nombor Bahagian dalaman
pengeluar
Penerangan ringkas
IGBT 1200V 35A 298W TO263AB
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
259345 Pieces
Harga rujukan
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])
- AX Semiconductor mempunyai HGT1S10N120BNST dalam stok untuk menjual.
- Pilihan penghantaran dan penghantaran masa:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Pilihan pembayaran:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasi bagi HGT1S10N120BNST
Jaminan kualiti :
jaminan 365 hari
Sumber saham :
Francais Pengedar / Pengilang Direct
Negara asal :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian :
HGT1S10N120BNST
pengeluar :
ON Semiconductor
Penerangan :
IGBT 1200V 35A 298W TO263AB
Siri :
-
Status Bahagian :
Active
Jenis IGBT :
NPT
Voltage - Breaker Pemungut Pemungut (Max) :
1200V
Pemungut Semasa (Ic) (Maks) :
35A
Pengumpul Semasa - Pulsed (Icm) :
80A
Vce (pada) (Maks) @ Vge, Ic :
2.7V @ 15V, 10A
Kuasa - Maks :
298W
Menukar Tenaga :
320µJ (on), 800µJ (off)
Jenis Input :
Standard
Caj Gate :
100nC
Td (hidup / mati) @ 25 ° C :
23ns/165ns
Keadaan ujian :
960V, 10A, 10 Ohm, 15V
Masa Pemulihan Songsang (trr) :
-
Suhu Operasi :
-55°C ~ 150°C (TJ)
Jenis Pemasangan :
Surface Mount
Pakej / Kes :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pakej Peranti Pembekal :
TO-263AB
Berat :
-
Keadaan :
Baru dan asli
dokumen untuk HGT1S10N120BNST
Helaian data :
HGT1S10N120BNST.pdf
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