MT53D512M64D4NY-046 XT ES:E TR - IC DRAM 32G 2133MHZ FBGA

Nombor Bahagian pengilang

MT53D512M64D4NY-046 XT ES:E TR

Nombor Bahagian dalaman

AX-MT53D512M64D4NY-046 XT ES:E TR

pengeluar

Micron Technology Inc.

Penerangan ringkas

IC DRAM 32G 2133MHZ FBGA

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

67235 Pieces

Harga rujukan

~~USD 0~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai MT53D512M64D4NY-046 XT ES:E TR dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi MT53D512M64D4NY-046 XT ES:E TR

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : MT53D512M64D4NY-046 XT ES:E TR

pengeluar : Micron Technology Inc.

Penerangan : IC DRAM 32G 2133MHZ FBGA

Siri : -

Status Bahagian : Obsolete

Jenis Memori : Volatile

Format Memori : DRAM

Teknologi : SDRAM - Mobile LPDDR4

Saiz Memori : 32Gb (512M x 64)

Frekuensi Jam : 2133MHz

Tulis Masa Kitar - Kata, Halaman : -

Masa Capaian : -

Antara Muka Memori : -

Voltan - Bekalan : 1.1V

Suhu Operasi : -30°C ~ 105°C (TC)

Jenis Pemasangan : -

Pakej / Kes : -

Pakej Peranti Pembekal : -

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : MT53D512M6 , MT53D512M64D4NY

dokumen untuk MT53D512M64D4NY-046 XT ES:E TR

Helaian data : MT53D512M64D4NY-046 XT ES:E TR.pdf

produk berkaitan untuk MT53D512M64D4NY-046 XT ES:E TR Micron Technology Inc.

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PEF220BJ80238BK1	Vishay Beyschlag	CAP CER 8000PF 15KV R230 DISK.
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PZ0140WL10136CB1	Vishay Beyschlag	CAP CER 100PF 16KV DISK.
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