IRF6706S2TR1PBF - MOSFET N-CH 25V 17A DIRECTFET-S1

Nombor Bahagian pengilang

IRF6706S2TR1PBF

Nombor Bahagian dalaman

AX-IRF6706S2TR1PBF

pengeluar

Infineon Technologies

Penerangan ringkas

MOSFET N-CH 25V 17A DIRECTFET-S1

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

53076 Pieces

Harga rujukan

~~USD 0~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai IRF6706S2TR1PBF dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi IRF6706S2TR1PBF

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : IRF6706S2TR1PBF

pengeluar : Infineon Technologies

Penerangan : MOSFET N-CH 25V 17A DIRECTFET-S1

Siri : HEXFET®

Status Bahagian : Obsolete

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 25V

Semasa - Saliran berterusan (Id) @ 25 ° C : 17A (Ta), 63A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 3.8 mOhm @ 17A, 10V

Vgs (th) (Max) @ Id : 2.35V @ 25µA

Caj Gate (Qg) (Max) @ Vgs : 20nC @ 4.5V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 1810pF @ 13V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 1.8W (Ta), 26W (Tc)

Suhu Operasi : -55°C ~ 175°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : DIRECTFET S1

Pakej / Kes : DirectFET™ Isometric S1

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : IRF67 , IRF6706

dokumen untuk IRF6706S2TR1PBF

Helaian data : IRF6706S2TR1PBF.pdf

produk berkaitan untuk IRF6706S2TR1PBF Infineon Technologies

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PEF220BJ80238BK1	Vishay Beyschlag	CAP CER 8000PF 15KV R230 DISK.
MC04YC223KAA	AVX Corporation	CAP CER 0.022UF 16V X7R AXIAL.
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