SI3812DV-T1-GE3 - MOSFET N-CH 20V 2A 6-TSOP

Nombor Bahagian pengilang

SI3812DV-T1-GE3

Nombor Bahagian dalaman

AX-SI3812DV-T1-GE3

pengeluar

Vishay Siliconix

Penerangan ringkas

MOSFET N-CH 20V 2A 6-TSOP

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

11344 Pieces

Harga rujukan

~~USD 0~~

Harga kami

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AX Semiconductor mempunyai SI3812DV-T1-GE3 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi SI3812DV-T1-GE3

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : SI3812DV-T1-GE3

pengeluar : Vishay Siliconix

Penerangan : MOSFET N-CH 20V 2A 6-TSOP

Siri : LITTLE FOOT®

Status Bahagian : Obsolete

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 20V

Semasa - Saliran berterusan (Id) @ 25 ° C : 2A (Ta)

Voltan Drive (Max Rds On, Min Rds On) : 2.5V, 4.5V

Rds On (Max) @ Id, Vgs : 125 mOhm @ 2.4A, 4.5V

Vgs (th) (Max) @ Id : 600mV @ 250µA (Min)

Caj Gate (Qg) (Max) @ Vgs : 4nC @ 4.5V

Vgs (Max) : ±12V

Input Capacitance (Ciss) (Max) @ Vds : -

Ciri FET : Schottky Diode (Isolated)

Pemberlakuan Kuasa (Max) : 830mW (Ta)

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : 6-TSOP

Pakej / Kes : SOT-23-6 Thin, TSOT-23-6

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : SI381 , SI3812D

dokumen untuk SI3812DV-T1-GE3

Helaian data : SI3812DV-T1-GE3.pdf

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