FQD2N60CTF_F080 - MOSFET N-CH 600V 1.9A DPAK

Nombor Bahagian pengilang
Nombor Bahagian dalaman
pengeluar
Penerangan ringkas
MOSFET N-CH 600V 1.9A DPAK
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
7312 Pieces
Harga rujukan
USD 0
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai FQD2N60CTF_F080 dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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spesifikasi bagi FQD2N60CTF_F080

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : FQD2N60CTF_F080
pengeluar : ON Semiconductor
Penerangan : MOSFET N-CH 600V 1.9A DPAK
Siri : QFET®
Status Bahagian : Obsolete
Jenis FET : N-Channel
Teknologi : MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) : 600V
Semasa - Saliran berterusan (Id) @ 25 ° C : 1.9A (Tc)
Voltan Drive (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4.7 Ohm @ 950mA, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Caj Gate (Qg) (Max) @ Vgs : 12nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 235pF @ 25V
Ciri FET : -
Pemberlakuan Kuasa (Max) : 2.5W (Ta), 44W (Tc)
Suhu Operasi : -55°C ~ 150°C (TJ)
Jenis Pemasangan : Surface Mount
Pakej Peranti Pembekal : D-Pak
Pakej / Kes : TO-252-3, DPak (2 Leads + Tab), SC-63
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : FQD2N , FQD2N60

dokumen untuk FQD2N60CTF_F080

Helaian data : FQD2N60CTF_F080.pdf

produk berkaitan untuk FQD2N60CTF_F080 ON Semiconductor

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