SIHB33N60ET5-GE3 - MOSFET N-CH 600V 33A TO263
Nombor Bahagian pengilang
Nombor Bahagian dalaman
pengeluar
Penerangan ringkas
MOSFET N-CH 600V 33A TO263
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
128815 Pieces
Harga rujukan
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])
- AX Semiconductor mempunyai SIHB33N60ET5-GE3 dalam stok untuk menjual.
- Pilihan penghantaran dan penghantaran masa:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Pilihan pembayaran:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasi bagi SIHB33N60ET5-GE3
Jaminan kualiti :
jaminan 365 hari
Sumber saham :
Francais Pengedar / Pengilang Direct
Negara asal :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian :
SIHB33N60ET5-GE3
pengeluar :
Vishay Siliconix
Penerangan :
MOSFET N-CH 600V 33A TO263
Siri :
E
Status Bahagian :
Active
Jenis FET :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) :
600V
Semasa - Saliran berterusan (Id) @ 25 ° C :
33A (Tc)
Voltan Drive (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
99 mOhm @ 16.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Caj Gate (Qg) (Max) @ Vgs :
150nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
3508pF @ 100V
Ciri FET :
-
Pemberlakuan Kuasa (Max) :
278W (Tc)
Suhu Operasi :
-55°C ~ 150°C (TJ)
Jenis Pemasangan :
Surface Mount
Pakej Peranti Pembekal :
TO-263 (D²Pak)
Pakej / Kes :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Berat :
-
Keadaan :
Baru dan asli
dokumen untuk SIHB33N60ET5-GE3
Helaian data :
SIHB33N60ET5-GE3.pdf
produk berkaitan untuk SIHB33N60ET5-GE3 Vishay Siliconix
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CAP CER 0.022UF 100V X7R RADIAL. |
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CAP CER 6000PF 16KV SCREW. |
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CAP CER 5000PF 20KV SCREW. |
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CAP CER 50PF 30KV AXIAL. |
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Vishay Beyschlag |
CAP CER 10000PF 14KV SCREW. |
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Vishay Beyschlag |
CAP CER 100PF 16KV DISK. |
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