GP2M002A065PG - MOSFET N-CH 650V 1.8A IPAK

Nombor Bahagian pengilang
Nombor Bahagian dalaman
Penerangan ringkas
MOSFET N-CH 650V 1.8A IPAK
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
21016 Pieces
Harga rujukan
USD 0
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai GP2M002A065PG dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Pilihan pembayaran:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasi bagi GP2M002A065PG

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : GP2M002A065PG
pengeluar : Global Power Technologies Group
Penerangan : MOSFET N-CH 650V 1.8A IPAK
Siri : -
Status Bahagian : Obsolete
Jenis FET : N-Channel
Teknologi : MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) : 650V
Semasa - Saliran berterusan (Id) @ 25 ° C : 1.8A (Tc)
Voltan Drive (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4.6 Ohm @ 900mA, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Caj Gate (Qg) (Max) @ Vgs : 8.5nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 353pF @ 25V
Ciri FET : -
Pemberlakuan Kuasa (Max) : 52W (Tc)
Suhu Operasi : -55°C ~ 150°C (TJ)
Jenis Pemasangan : Through Hole
Pakej Peranti Pembekal : I-PAK
Pakej / Kes : TO-251-3 Short Leads, IPak, TO-251AA
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : GP2M , GP2M00

dokumen untuk GP2M002A065PG

Helaian data : GP2M002A065PG.pdf

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