SQJ202EP-T1_GE3 - MOSFET 2N-CH 12V 20A/60A PPAK SO
Nombor Bahagian pengilang
Nombor Bahagian dalaman
pengeluar
Penerangan ringkas
MOSFET 2N-CH 12V 20A/60A PPAK SO
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
737325 Pieces
Harga rujukan
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])
- AX Semiconductor mempunyai SQJ202EP-T1_GE3 dalam stok untuk menjual.
- Pilihan penghantaran dan penghantaran masa:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Pilihan pembayaran:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasi bagi SQJ202EP-T1_GE3
Jaminan kualiti :
jaminan 365 hari
Sumber saham :
Francais Pengedar / Pengilang Direct
Negara asal :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian :
SQJ202EP-T1_GE3
pengeluar :
Vishay Siliconix
Penerangan :
MOSFET 2N-CH 12V 20A/60A PPAK SO
Siri :
Automotive, AEC-Q101, TrenchFET®
Status Bahagian :
Active
Jenis FET :
2 N-Channel (Dual)
Ciri FET :
Standard
Salurkan ke Voltan Sumber (Vdss) :
12V
Semasa - Saliran berterusan (Id) @ 25 ° C :
20A, 60A
Rds On (Max) @ Id, Vgs :
6.5 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Caj Gate (Qg) (Max) @ Vgs :
22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
975pF @ 6V
Kuasa - Maks :
27W, 48W
Suhu Operasi :
-55°C ~ 175°C (TJ)
Jenis Pemasangan :
Surface Mount
Pakej / Kes :
PowerPAK® SO-8 Dual
Pakej Peranti Pembekal :
PowerPAK® SO-8 Dual Asymmetric
Berat :
-
Keadaan :
Baru dan asli
dokumen untuk SQJ202EP-T1_GE3
Helaian data :
SQJ202EP-T1_GE3.pdf
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