SI1011X-T1-GE3 - MOSFET P-CH 12V SC-89

Nombor Bahagian pengilang
Nombor Bahagian dalaman
pengeluar
Penerangan ringkas
MOSFET P-CH 12V SC-89
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
60540 Pieces
Harga rujukan
USD 0
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai SI1011X-T1-GE3 dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Pilihan pembayaran:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasi bagi SI1011X-T1-GE3

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : SI1011X-T1-GE3
pengeluar : Vishay Siliconix
Penerangan : MOSFET P-CH 12V SC-89
Siri : TrenchFET®
Status Bahagian : Obsolete
Jenis FET : P-Channel
Teknologi : MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) : 12V
Semasa - Saliran berterusan (Id) @ 25 ° C : -
Voltan Drive (Max Rds On, Min Rds On) : 1.2V, 4.5V
Rds On (Max) @ Id, Vgs : 640 mOhm @ 400mA, 4.5V
Vgs (th) (Max) @ Id : 800mV @ 250µA
Caj Gate (Qg) (Max) @ Vgs : 4nC @ 4.5V
Vgs (Max) : ±5V
Input Capacitance (Ciss) (Max) @ Vds : 62pF @ 6V
Ciri FET : -
Pemberlakuan Kuasa (Max) : 190mW (Ta)
Suhu Operasi : -55°C ~ 150°C (TJ)
Jenis Pemasangan : Surface Mount
Pakej Peranti Pembekal : SC-89-3
Pakej / Kes : SC-89, SOT-490
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : SI10 , SI1011X

dokumen untuk SI1011X-T1-GE3

Helaian data : SI1011X-T1-GE3.pdf

produk berkaitan untuk SI1011X-T1-GE3 Vishay Siliconix

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