TC58BYG1S3HBAI4 - 2GB SLC NAND BGA 24NM I TEMP EE
Nombor Bahagian pengilang
Nombor Bahagian dalaman
pengeluar
Penerangan ringkas
2GB SLC NAND BGA 24NM I TEMP EE
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
97720 Pieces
Harga rujukan
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])
- AX Semiconductor mempunyai TC58BYG1S3HBAI4 dalam stok untuk menjual.
- Pilihan penghantaran dan penghantaran masa:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Pilihan pembayaran:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasi bagi TC58BYG1S3HBAI4
Jaminan kualiti :
jaminan 365 hari
Sumber saham :
Francais Pengedar / Pengilang Direct
Negara asal :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian :
TC58BYG1S3HBAI4
pengeluar :
Toshiba Memory America, Inc.
Penerangan :
2GB SLC NAND BGA 24NM I TEMP EE
Siri :
Benand™
Status Bahagian :
Active
Jenis Memori :
Non-Volatile
Format Memori :
FLASH
Teknologi :
FLASH - NAND (SLC)
Saiz Memori :
2Gb (256M x 8)
Frekuensi Jam :
-
Tulis Masa Kitar - Kata, Halaman :
25ns
Masa Capaian :
-
Antara Muka Memori :
-
Voltan - Bekalan :
1.7V ~ 1.95V
Suhu Operasi :
-40°C ~ 85°C (TA)
Jenis Pemasangan :
Surface Mount
Pakej / Kes :
63-VFBGA
Pakej Peranti Pembekal :
63-TFBGA (9x11)
Berat :
-
Keadaan :
Baru dan asli
dokumen untuk TC58BYG1S3HBAI4
Helaian data :
TC58BYG1S3HBAI4.pdf
produk berkaitan untuk TC58BYG1S3HBAI4 Toshiba Memory America, Inc.
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CAP CER 7500PF 22.5KV SCREW. |
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CAP CER 6000PF 20KV R230 DISK. |
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CAP CER 0.022UF 100V X7R RADIAL. |
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