EPC2105ENG - GAN TRANS 2N-CH 80V BUMPED DIE

Nombor Bahagian pengilang
Nombor Bahagian dalaman
pengeluar
Penerangan ringkas
GAN TRANS 2N-CH 80V BUMPED DIE
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
28483 Pieces
Harga rujukan
USD 0
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai EPC2105ENG dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Pilihan pembayaran:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasi bagi EPC2105ENG

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : EPC2105ENG
pengeluar : EPC
Penerangan : GAN TRANS 2N-CH 80V BUMPED DIE
Siri : eGaN®
Status Bahagian : Discontinued at Digi-Key
Jenis FET : 2 N-Channel (Half Bridge)
Ciri FET : GaNFET (Gallium Nitride)
Salurkan ke Voltan Sumber (Vdss) : 80V
Semasa - Saliran berterusan (Id) @ 25 ° C : 9.5A, 38A
Rds On (Max) @ Id, Vgs : 14.5 mOhm @ 20A, 5V
Vgs (th) (Max) @ Id : 2.5V @ 2.5mA
Caj Gate (Qg) (Max) @ Vgs : 2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 40V
Kuasa - Maks : -
Suhu Operasi : -40°C ~ 150°C (TJ)
Jenis Pemasangan : Surface Mount
Pakej / Kes : Die
Pakej Peranti Pembekal : Die
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : EPC , EPC21

dokumen untuk EPC2105ENG

Helaian data : EPC2105ENG.pdf

produk berkaitan untuk EPC2105ENG EPC

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