W947D2HBJX6E TR - IC DRAM 128M PARALLEL 90VFBGA
Nombor Bahagian pengilang
Nombor Bahagian dalaman
pengeluar
Penerangan ringkas
IC DRAM 128M PARALLEL 90VFBGA
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
238060 Pieces
Harga rujukan
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])
- AX Semiconductor mempunyai W947D2HBJX6E TR dalam stok untuk menjual.
- Pilihan penghantaran dan penghantaran masa:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Pilihan pembayaran:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasi bagi W947D2HBJX6E TR
Jaminan kualiti :
jaminan 365 hari
Sumber saham :
Francais Pengedar / Pengilang Direct
Negara asal :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian :
W947D2HBJX6E TR
pengeluar :
Winbond Electronics
Penerangan :
IC DRAM 128M PARALLEL 90VFBGA
Siri :
-
Status Bahagian :
Active
Jenis Memori :
Volatile
Format Memori :
DRAM
Teknologi :
SDRAM - Mobile LPDDR
Saiz Memori :
128Mb (4M x 32)
Frekuensi Jam :
166MHz
Tulis Masa Kitar - Kata, Halaman :
15ns
Masa Capaian :
5ns
Antara Muka Memori :
Parallel
Voltan - Bekalan :
1.7V ~ 1.95V
Suhu Operasi :
-25°C ~ 85°C (TC)
Jenis Pemasangan :
Surface Mount
Pakej / Kes :
90-TFBGA
Pakej Peranti Pembekal :
90-VFBGA (8x13)
Berat :
-
Keadaan :
Baru dan asli
dokumen untuk W947D2HBJX6E TR
Helaian data :
W947D2HBJX6E TR.pdf
produk berkaitan untuk W947D2HBJX6E TR Winbond Electronics
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