SI4435DDY-T1-E3 - MOSFET P-CH 30V 11.4A 8SOIC

Nombor Bahagian pengilang
Nombor Bahagian dalaman
pengeluar
Penerangan ringkas
MOSFET P-CH 30V 11.4A 8SOIC
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
1451960 Pieces
Harga rujukan
USD 0.19323
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai SI4435DDY-T1-E3 dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Pilihan pembayaran:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasi bagi SI4435DDY-T1-E3

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : SI4435DDY-T1-E3
pengeluar : Vishay Siliconix
Penerangan : MOSFET P-CH 30V 11.4A 8SOIC
Siri : TrenchFET®
Status Bahagian : Active
Jenis FET : P-Channel
Teknologi : MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) : 30V
Semasa - Saliran berterusan (Id) @ 25 ° C : 11.4A (Tc)
Voltan Drive (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 24 mOhm @ 9.1A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Caj Gate (Qg) (Max) @ Vgs : 50nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1350pF @ 15V
Ciri FET : -
Pemberlakuan Kuasa (Max) : 2.5W (Ta), 5W (Tc)
Suhu Operasi : -55°C ~ 150°C (TJ)
Jenis Pemasangan : Surface Mount
Pakej Peranti Pembekal : 8-SO
Pakej / Kes : 8-SOIC (0.154", 3.90mm Width)
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : SI443 , SI4435D

dokumen untuk SI4435DDY-T1-E3

Helaian data : SI4435DDY-T1-E3.pdf

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