RQ3E080BNTB - MOSFET N-CH 30V 8A HSMT8
Nombor Bahagian pengilang
Nombor Bahagian dalaman
AX-RQ3E080BNTB
pengeluar
Penerangan ringkas
MOSFET N-CH 30V 8A HSMT8
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
4403075 Pieces
Harga rujukan
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])
- AX Semiconductor mempunyai RQ3E080BNTB dalam stok untuk menjual.
- Pilihan penghantaran dan penghantaran masa:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Pilihan pembayaran:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasi bagi RQ3E080BNTB
Jaminan kualiti :
jaminan 365 hari
Sumber saham :
Francais Pengedar / Pengilang Direct
Negara asal :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian :
RQ3E080BNTB
pengeluar :
Rohm Semiconductor
Penerangan :
MOSFET N-CH 30V 8A HSMT8
Siri :
-
Status Bahagian :
Active
Jenis FET :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) :
30V
Semasa - Saliran berterusan (Id) @ 25 ° C :
8A (Ta)
Voltan Drive (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
15.2 mOhm @ 8A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Caj Gate (Qg) (Max) @ Vgs :
14.5nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
660pF @ 15V
Ciri FET :
-
Pemberlakuan Kuasa (Max) :
2W (Ta)
Suhu Operasi :
150°C (TJ)
Jenis Pemasangan :
Surface Mount
Pakej Peranti Pembekal :
8-HSMT (3.2x3)
Pakej / Kes :
8-PowerVDFN
Berat :
-
Keadaan :
Baru dan asli
dokumen untuk RQ3E080BNTB
Helaian data :
RQ3E080BNTB.pdf
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