CDBGBSC201200-G - DIODE DUAL SILICON CARBIDE POWER

Nombor Bahagian pengilang
Nombor Bahagian dalaman
pengeluar
Penerangan ringkas
DIODE DUAL SILICON CARBIDE POWER
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
41328 Pieces
Harga rujukan
USD 8.144388
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai CDBGBSC201200-G dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Pilihan pembayaran:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasi bagi CDBGBSC201200-G

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : CDBGBSC201200-G
pengeluar : Comchip Technology
Penerangan : DIODE DUAL SILICON CARBIDE POWER
Siri : -
Status Bahagian : Active
Konfigurasi Diod : 1 Pair Common Cathode
Jenis Diod : Silicon Carbide Schottky
Voltan - DC Reverse (Vr) (Max) : 1200V
Semasa - Purata Rectified (Io) (setiap Diode) : 25.9A (DC)
Voltan - Teruskan (Vf) (Max) @ Jika : 1.8V @ 10A
Kelajuan : No Recovery Time > 500mA (Io)
Masa Pemulihan Songsang (trr) : 0ns
Semasa - Kebocoran Songsang @ Vr : 100µA @ 1200V
Suhu Pengoperasian - Persimpangan : -55°C ~ 175°C
Jenis Pemasangan : Through Hole
Pakej / Kes : TO-247-3
Pakej Peranti Pembekal : TO-247
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : CDBGB , CDBGBSC

dokumen untuk CDBGBSC201200-G

Helaian data : CDBGBSC201200-G.pdf

produk berkaitan untuk CDBGBSC201200-G Comchip Technology

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