DMN2016LHAB-7 - MOSFET 2N-CH 20V 7.5A 6UDFN
Nombor Bahagian pengilang
Nombor Bahagian dalaman
pengeluar
Penerangan ringkas
MOSFET 2N-CH 20V 7.5A 6UDFN
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
1785165 Pieces
Harga rujukan
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])
- AX Semiconductor mempunyai DMN2016LHAB-7 dalam stok untuk menjual.
- Pilihan penghantaran dan penghantaran masa:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Pilihan pembayaran:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasi bagi DMN2016LHAB-7
Jaminan kualiti :
jaminan 365 hari
Sumber saham :
Francais Pengedar / Pengilang Direct
Negara asal :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian :
DMN2016LHAB-7
pengeluar :
Diodes Incorporated
Penerangan :
MOSFET 2N-CH 20V 7.5A 6UDFN
Siri :
-
Status Bahagian :
Active
Jenis FET :
2 N-Channel (Dual) Common Drain
Ciri FET :
Logic Level Gate
Salurkan ke Voltan Sumber (Vdss) :
20V
Semasa - Saliran berterusan (Id) @ 25 ° C :
7.5A
Rds On (Max) @ Id, Vgs :
15.5 mOhm @ 4A, 4.5V
Vgs (th) (Max) @ Id :
1.1V @ 250µA
Caj Gate (Qg) (Max) @ Vgs :
16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
1550pF @ 10V
Kuasa - Maks :
1.2W
Suhu Operasi :
-55°C ~ 150°C (TJ)
Jenis Pemasangan :
Surface Mount
Pakej / Kes :
6-UDFN Exposed Pad
Pakej Peranti Pembekal :
U-DFN2030-6
Berat :
-
Keadaan :
Baru dan asli
dokumen untuk DMN2016LHAB-7
Helaian data :
DMN2016LHAB-7.pdf
produk berkaitan untuk DMN2016LHAB-7 Diodes Incorporated
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