IPT65R195G7XTMA1 - HIGH POWERNEW

Nombor Bahagian pengilang
Nombor Bahagian dalaman
Penerangan ringkas
HIGH POWERNEW
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
273760 Pieces
Harga rujukan
USD 1.024836
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai IPT65R195G7XTMA1 dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Pilihan pembayaran:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasi bagi IPT65R195G7XTMA1

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : IPT65R195G7XTMA1
pengeluar : Infineon Technologies
Penerangan : HIGH POWERNEW
Siri : CoolMOS™ C7
Status Bahagian : Active
Jenis FET : N-Channel
Teknologi : MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) : 650V
Semasa - Saliran berterusan (Id) @ 25 ° C : 14A (Tc)
Voltan Drive (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 195 mOhm @ 4.8A, 10V
Vgs (th) (Max) @ Id : 4V @ 240µA
Caj Gate (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 996pF @ 400V
Ciri FET : -
Pemberlakuan Kuasa (Max) : 97W (Tc)
Suhu Operasi : -55°C ~ 150°C (TJ)
Jenis Pemasangan : Surface Mount
Pakej Peranti Pembekal : PG-HSOF-8-2
Pakej / Kes : 8-PowerSFN
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : IPT65 , IPT65R19

dokumen untuk IPT65R195G7XTMA1

Helaian data : IPT65R195G7XTMA1.pdf

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