SCTW90N65G2V - SILICON CARBIDE POWER MOSFET 650

Nombor Bahagian pengilang

SCTW90N65G2V

Nombor Bahagian dalaman

AX-SCTW90N65G2V

pengeluar

STMicroelectronics

Penerangan ringkas

SILICON CARBIDE POWER MOSFET 650

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

12424 Pieces

Harga rujukan

~~USD 36.09~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai SCTW90N65G2V dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi SCTW90N65G2V

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : SCTW90N65G2V

pengeluar : STMicroelectronics

Penerangan : SILICON CARBIDE POWER MOSFET 650

Siri : -

Status Bahagian : Active

Jenis FET : N-Channel

Teknologi : SiCFET (Silicon Carbide)

Salurkan ke Voltan Sumber (Vdss) : 650V

Semasa - Saliran berterusan (Id) @ 25 ° C : 90A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 18V

Rds On (Max) @ Id, Vgs : 25 mOhm @ 50A, 18V

Vgs (th) (Max) @ Id : 5V @ 250µA

Caj Gate (Qg) (Max) @ Vgs : 157nC @ 18V

Vgs (Max) : +22V, -10V

Input Capacitance (Ciss) (Max) @ Vds : 3300pF @ 400V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 390W (Tc)

Suhu Operasi : -55°C ~ 200°C (TJ)

Jenis Pemasangan : Through Hole

Pakej Peranti Pembekal : HiP247™

Pakej / Kes : TO-247-3

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : SCTW , SCTW90

dokumen untuk SCTW90N65G2V

Helaian data : SCTW90N65G2V.pdf

produk berkaitan untuk SCTW90N65G2V STMicroelectronics

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