GB01SLT12-252 - DIODE SILICON 1.2KV 1A TO252

Nombor Bahagian pengilang
Nombor Bahagian dalaman
Penerangan ringkas
DIODE SILICON 1.2KV 1A TO252
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
362970 Pieces
Harga rujukan
USD 0.77295
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai GB01SLT12-252 dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Pilihan pembayaran:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasi bagi GB01SLT12-252

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : GB01SLT12-252
pengeluar : GeneSiC Semiconductor
Penerangan : DIODE SILICON 1.2KV 1A TO252
Siri : -
Status Bahagian : Active
Jenis Diod : Silicon Carbide Schottky
Voltan - DC Reverse (Vr) (Max) : 1200V
Semasa - Purata Rectified (Io) : 1A
Voltan - Teruskan (Vf) (Max) @ Jika : 1.8V @ 1A
Kelajuan : No Recovery Time > 500mA (Io)
Masa Pemulihan Songsang (trr) : 0ns
Semasa - Kebocoran Songsang @ Vr : 2µA @ 1200V
Kapasiti @ Vr, F : 69pF @ 1V, 1MHz
Jenis Pemasangan : Surface Mount
Pakej / Kes : TO-252-3, DPak (2 Leads + Tab), SC-63
Pakej Peranti Pembekal : TO-252
Suhu Pengoperasian - Persimpangan : -55°C ~ 175°C
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : GB01 , GB01SL

dokumen untuk GB01SLT12-252

Helaian data : GB01SLT12-252.pdf

produk berkaitan untuk GB01SLT12-252 GeneSiC Semiconductor

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CDR35BP103BKUSAR

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CAP CER 10000PF 100V BP 1825.

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CAP CER 3000PF 10KV.

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CAP CER 7500PF 22.5KV SCREW.

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