NSB8JTHE3_A/I - DIODE GEN PURP 600V 8A TO263AB

Nombor Bahagian pengilang

NSB8JTHE3_A/I

Nombor Bahagian dalaman

AX-NSB8JTHE3_A/I

pengeluar

Vishay Semiconductor Diodes Division

Penerangan ringkas

DIODE GEN PURP 600V 8A TO263AB

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

522690 Pieces

Harga rujukan

~~USD 0.53676~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai NSB8JTHE3_A/I dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi NSB8JTHE3_A/I

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : NSB8JTHE3_A/I

pengeluar : Vishay Semiconductor Diodes Division

Penerangan : DIODE GEN PURP 600V 8A TO263AB

Siri : Automotive, AEC-Q101

Status Bahagian : Active

Jenis Diod : Standard

Voltan - DC Reverse (Vr) (Max) : 600V

Semasa - Purata Rectified (Io) : 8A

Voltan - Teruskan (Vf) (Max) @ Jika : 1.1V @ 8A

Kelajuan : Standard Recovery >500ns, > 200mA (Io)

Masa Pemulihan Songsang (trr) : -

Semasa - Kebocoran Songsang @ Vr : 10µA @ 600V

Kapasiti @ Vr, F : 55pF @ 4V, 1MHz

Jenis Pemasangan : Surface Mount

Pakej / Kes : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pakej Peranti Pembekal : TO-263AB

Suhu Pengoperasian - Persimpangan : -55°C ~ 150°C

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : NSB8 , NSB8JT

dokumen untuk NSB8JTHE3_A/I

Helaian data : NSB8JTHE3_A/I.pdf

produk berkaitan untuk NSB8JTHE3_A/I Vishay Semiconductor Diodes Division

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