IPC302N12N3X1SA1 - MOSFET N-CH 120V 1A SAWN ON FOIL

Nombor Bahagian pengilang
Nombor Bahagian dalaman
Penerangan ringkas
MOSFET N-CH 120V 1A SAWN ON FOIL
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
146790 Pieces
Harga rujukan
USD 1.911234
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai IPC302N12N3X1SA1 dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Pilihan pembayaran:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasi bagi IPC302N12N3X1SA1

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : IPC302N12N3X1SA1
pengeluar : Infineon Technologies
Penerangan : MOSFET N-CH 120V 1A SAWN ON FOIL
Siri : OptiMOS™
Status Bahagian : Active
Jenis FET : N-Channel
Teknologi : MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) : 120V
Semasa - Saliran berterusan (Id) @ 25 ° C : 1A (Tj)
Voltan Drive (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 100 mOhm @ 2A, 10V
Vgs (th) (Max) @ Id : 4V @ 275µA
Caj Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
Ciri FET : -
Pemberlakuan Kuasa (Max) : -
Suhu Operasi : -
Jenis Pemasangan : Surface Mount
Pakej Peranti Pembekal : Sawn on foil
Pakej / Kes : Die
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : IPC30 , IPC302N1

dokumen untuk IPC302N12N3X1SA1

Helaian data : IPC302N12N3X1SA1.pdf

produk berkaitan untuk IPC302N12N3X1SA1 Infineon Technologies

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