IRFH5110TR2PBF - MOSFET N-CH 100V 5X6 PQFN

Nombor Bahagian pengilang

IRFH5110TR2PBF

Nombor Bahagian dalaman

AX-IRFH5110TR2PBF

pengeluar

Infineon Technologies

Penerangan ringkas

MOSFET N-CH 100V 5X6 PQFN

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

10208 Pieces

Harga rujukan

~~USD 0~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai IRFH5110TR2PBF dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi IRFH5110TR2PBF

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : IRFH5110TR2PBF

pengeluar : Infineon Technologies

Penerangan : MOSFET N-CH 100V 5X6 PQFN

Siri : HEXFET®

Status Bahagian : Obsolete

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 100V

Semasa - Saliran berterusan (Id) @ 25 ° C : 11A (Ta), 63A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 12.4 mOhm @ 37A, 10V

Vgs (th) (Max) @ Id : 4V @ 100µA

Caj Gate (Qg) (Max) @ Vgs : 72nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 3152pF @ 25V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 3.6W (Ta), 114W (Tc)

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : 8-PQFN (5x6)

Pakej / Kes : 8-PowerVDFN

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : IRFH , IRFH511

dokumen untuk IRFH5110TR2PBF

Helaian data : IRFH5110TR2PBF.pdf

produk berkaitan untuk IRFH5110TR2PBF Infineon Technologies

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