QJD1210011 - MOSFET 2N-CH 1200V 100A SIC

Nombor Bahagian pengilang
Nombor Bahagian dalaman
pengeluar
Penerangan ringkas
MOSFET 2N-CH 1200V 100A SIC
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
32662 Pieces
Harga rujukan
USD 0
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai QJD1210011 dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Pilihan pembayaran:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasi bagi QJD1210011

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : QJD1210011
pengeluar : Powerex Inc.
Penerangan : MOSFET 2N-CH 1200V 100A SIC
Siri : -
Status Bahagian : Active
Jenis FET : 2 N-Channel (Dual)
Ciri FET : Silicon Carbide (SiC)
Salurkan ke Voltan Sumber (Vdss) : 1200V (1.2kV)
Semasa - Saliran berterusan (Id) @ 25 ° C : 100A (Tc)
Rds On (Max) @ Id, Vgs : 25 mOhm @ 100A, 20V
Vgs (th) (Max) @ Id : 5V @ 10mA
Caj Gate (Qg) (Max) @ Vgs : 500nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds : 10200pF @ 800V
Kuasa - Maks : 900W
Suhu Operasi : -40°C ~ 175°C (TJ)
Jenis Pemasangan : Chassis Mount
Pakej / Kes : Module
Pakej Peranti Pembekal : Module
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : QJD , QJD12

dokumen untuk QJD1210011

Helaian data : QJD1210011.pdf

produk berkaitan untuk QJD1210011 Powerex Inc.

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