FDB86102LZ - MOSFET N-CH 100V 30A D2PAK

Nombor Bahagian pengilang
Nombor Bahagian dalaman
pengeluar
Penerangan ringkas
MOSFET N-CH 100V 30A D2PAK
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
556695 Pieces
Harga rujukan
USD 0.503976
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai FDB86102LZ dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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spesifikasi bagi FDB86102LZ

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : FDB86102LZ
pengeluar : ON Semiconductor
Penerangan : MOSFET N-CH 100V 30A D2PAK
Siri : PowerTrench®
Status Bahagian : Active
Jenis FET : N-Channel
Teknologi : MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) : 100V
Semasa - Saliran berterusan (Id) @ 25 ° C : 8.3A (Ta), 30A (Tc)
Voltan Drive (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 24 mOhm @ 8.3A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Caj Gate (Qg) (Max) @ Vgs : 21nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1275pF @ 50V
Ciri FET : -
Pemberlakuan Kuasa (Max) : 3.1W (Ta)
Suhu Operasi : -55°C ~ 150°C (TJ)
Jenis Pemasangan : Surface Mount
Pakej Peranti Pembekal : TO-263AB
Pakej / Kes : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : FDB , FDB86

dokumen untuk FDB86102LZ

Helaian data : FDB86102LZ.pdf

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