SI5513DC-T1-E3 - MOSFET N/P-CH 20V 3.1A 1206-8

Nombor Bahagian pengilang
Nombor Bahagian dalaman
pengeluar
Penerangan ringkas
MOSFET N/P-CH 20V 3.1A 1206-8
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
26887 Pieces
Harga rujukan
USD 0
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai SI5513DC-T1-E3 dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Pilihan pembayaran:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasi bagi SI5513DC-T1-E3

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : SI5513DC-T1-E3
pengeluar : Vishay Siliconix
Penerangan : MOSFET N/P-CH 20V 3.1A 1206-8
Siri : TrenchFET®
Status Bahagian : Obsolete
Jenis FET : N and P-Channel
Ciri FET : Logic Level Gate
Salurkan ke Voltan Sumber (Vdss) : 20V
Semasa - Saliran berterusan (Id) @ 25 ° C : 3.1A, 2.1A
Rds On (Max) @ Id, Vgs : 75 mOhm @ 3.1A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Caj Gate (Qg) (Max) @ Vgs : 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : -
Kuasa - Maks : 1.1W
Suhu Operasi : -55°C ~ 150°C (TJ)
Jenis Pemasangan : Surface Mount
Pakej / Kes : 8-SMD, Flat Lead
Pakej Peranti Pembekal : 1206-8 ChipFET™
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : SI55 , SI5513D

dokumen untuk SI5513DC-T1-E3

Helaian data : SI5513DC-T1-E3.pdf

produk berkaitan untuk SI5513DC-T1-E3 Vishay Siliconix

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