SIHJ10N60E-T1-GE3 - MOSFET N-CH 600V 10A POWERPAKSO

Nombor Bahagian pengilang
Nombor Bahagian dalaman
pengeluar
Penerangan ringkas
MOSFET N-CH 600V 10A POWERPAKSO
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
141265 Pieces
Harga rujukan
USD 1.986
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai SIHJ10N60E-T1-GE3 dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Pilihan pembayaran:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasi bagi SIHJ10N60E-T1-GE3

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : SIHJ10N60E-T1-GE3
pengeluar : Vishay Siliconix
Penerangan : MOSFET N-CH 600V 10A POWERPAKSO
Siri : E
Status Bahagian : Active
Jenis FET : N-Channel
Teknologi : MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) : 600V
Semasa - Saliran berterusan (Id) @ 25 ° C : 10A (Tc)
Voltan Drive (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 360 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 250µA
Caj Gate (Qg) (Max) @ Vgs : 50nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 784pF @ 100V
Ciri FET : -
Pemberlakuan Kuasa (Max) : 89W (Tc)
Suhu Operasi : -55°C ~ 150°C (TJ)
Jenis Pemasangan : Surface Mount
Pakej Peranti Pembekal : PowerPAK® SO-8
Pakej / Kes : 8-PowerTDFN
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : SIHJ1 , SIHJ10N6

dokumen untuk SIHJ10N60E-T1-GE3

Helaian data : SIHJ10N60E-T1-GE3.pdf

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