AS4C16M16MSA-6BIN - IC DRAM 256M PARALLEL 54FBGA

Nombor Bahagian pengilang
Nombor Bahagian dalaman
Penerangan ringkas
IC DRAM 256M PARALLEL 54FBGA
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
88870 Pieces
Harga rujukan
USD 3.51
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai AS4C16M16MSA-6BIN dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Pilihan pembayaran:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasi bagi AS4C16M16MSA-6BIN

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : AS4C16M16MSA-6BIN
pengeluar : Alliance Memory, Inc.
Penerangan : IC DRAM 256M PARALLEL 54FBGA
Siri : -
Status Bahagian : Active
Jenis Memori : Volatile
Format Memori : DRAM
Teknologi : SDRAM - Mobile SDRAM
Saiz Memori : 256Mb (16M x 16)
Frekuensi Jam : 166MHz
Tulis Masa Kitar - Kata, Halaman : -
Masa Capaian : 5.5ns
Antara Muka Memori : Parallel
Voltan - Bekalan : 1.7V ~ 1.95V
Suhu Operasi : -40°C ~ 85°C (TA)
Jenis Pemasangan : Surface Mount
Pakej / Kes : 54-VFBGA
Pakej Peranti Pembekal : 54-FBGA (8x8)
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : AS4C1 , AS4C16M1

dokumen untuk AS4C16M16MSA-6BIN

Helaian data : AS4C16M16MSA-6BIN.pdf

produk berkaitan untuk AS4C16M16MSA-6BIN Alliance Memory, Inc.

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