1N6483HE3/97 - DIODE GEN PURP 800V 1A DO213AB

Nombor Bahagian pengilang
Nombor Bahagian dalaman
Penerangan ringkas
DIODE GEN PURP 800V 1A DO213AB
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
3523250 Pieces
Harga rujukan
USD 0.079632
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai 1N6483HE3/97 dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Pilihan pembayaran:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasi bagi 1N6483HE3/97

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : 1N6483HE3/97
pengeluar : Vishay Semiconductor Diodes Division
Penerangan : DIODE GEN PURP 800V 1A DO213AB
Siri : SUPERECTIFIER®
Status Bahagian : Active
Jenis Diod : Standard
Voltan - DC Reverse (Vr) (Max) : 800V
Semasa - Purata Rectified (Io) : 1A
Voltan - Teruskan (Vf) (Max) @ Jika : 1.1V @ 1A
Kelajuan : Standard Recovery >500ns, > 200mA (Io)
Masa Pemulihan Songsang (trr) : -
Semasa - Kebocoran Songsang @ Vr : 10µA @ 800V
Kapasiti @ Vr, F : 8pF @ 4V, 1MHz
Jenis Pemasangan : Surface Mount
Pakej / Kes : DO-213AB, MELF (Glass)
Pakej Peranti Pembekal : DO-213AB
Suhu Pengoperasian - Persimpangan : -65°C ~ 175°C
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : 1N64 , 1N6483

dokumen untuk 1N6483HE3/97

Helaian data : 1N6483HE3/97.pdf

produk berkaitan untuk 1N6483HE3/97 Vishay Semiconductor Diodes Division

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