AS4C16M16D1-5BCN - IC DRAM 256M PARALLEL 60TFBGA
Nombor Bahagian pengilang
Nombor Bahagian dalaman
pengeluar
Penerangan ringkas
IC DRAM 256M PARALLEL 60TFBGA
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
131615 Pieces
Harga rujukan
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])
- AX Semiconductor mempunyai AS4C16M16D1-5BCN dalam stok untuk menjual.
- Pilihan penghantaran dan penghantaran masa:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Pilihan pembayaran:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasi bagi AS4C16M16D1-5BCN
Jaminan kualiti :
jaminan 365 hari
Sumber saham :
Francais Pengedar / Pengilang Direct
Negara asal :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian :
AS4C16M16D1-5BCN
pengeluar :
Alliance Memory, Inc.
Penerangan :
IC DRAM 256M PARALLEL 60TFBGA
Siri :
-
Status Bahagian :
Active
Jenis Memori :
Volatile
Format Memori :
DRAM
Teknologi :
SDRAM - DDR
Saiz Memori :
256Mb (16M x 16)
Frekuensi Jam :
200MHz
Tulis Masa Kitar - Kata, Halaman :
15ns
Masa Capaian :
700ps
Antara Muka Memori :
Parallel
Voltan - Bekalan :
2.3V ~ 2.7V
Suhu Operasi :
0°C ~ 70°C (TA)
Jenis Pemasangan :
Surface Mount
Pakej / Kes :
60-TFBGA
Pakej Peranti Pembekal :
60-TFBGA (8x13)
Berat :
-
Keadaan :
Baru dan asli
dokumen untuk AS4C16M16D1-5BCN
Helaian data :
AS4C16M16D1-5BCN.pdf
produk berkaitan untuk AS4C16M16D1-5BCN Alliance Memory, Inc.
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CAP CER 3000PF 10KV. |
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CAP CER 160PF 9KV AXIAL. |
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CAP CER 1500PF 14KV SCREW. |
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CAP CER 7500PF 22.5KV SCREW. |
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